近日，北京科技大学张跃团队研究了二维半导体中的原子层键合接触。相关论文于2025年11月20日发表在《科学》杂志上。
二维半导体与金属之间的范德华接触由于带耦合弱、键强度低，一直不如半导体工业中使用的共价键接触。
研究组通过在过渡金属二硫化物的过渡金属原子层与金属之间建立金属相干键合界面，报道了具有强带耦合和高界面内聚力的原子层键合（ALB）接触。这种接触表现出超低的接触电阻和极好的热机械稳定性，可与共价键接触相媲美，并超越了所有已报道的接触结构。在单层二硫化钼和金中形成的ALB触点显示出70欧姆-微米的接触电阻和高达400℃的热机械稳定性，高温退火后的最大导通电流为1.1毫安/微米，所有这些都符合工业集成的需求。
附：英文原文
Title: Atomic layer bonding contacts in two-dimensional semiconductors
Author: Li Gao, Zhangyi Chen, Zhenghui Fang, Shucao Lu, Xiaofu Wei, He Jiang, Kuanglei Chen, Xiaoyu He, Chao Chen, Wei Shangguan, Jinsen Shang, Huihui Yu, Mengyu Hong, Yang He, Xiankun Zhang, Zheng Zhang, Yue Zhang
Issue&Volume: 2025-11-20
Abstract: Van der Waals contact between two-dimensional semiconductors and metals has always been inferior to covalent bond contacts used in semiconductor industry because of weak band coupling and low bond strength. Here, we report an atomic layer bonding (ALB) contact with strong band coupling and high interfacial cohesion by establishing a metallic coherent bonding interface between the transition-metal atomic layer of transition-metal dichalcogenides and metals. This contact exhibits ultralow contact resistance and superb thermomechanical stability, comparable to those of covalent bond contacts and surpassing all reported contact configurations. ALB contact formed in monolayer molybdenum disulfide and gold demonstrates a contact resistance of 70 ohm-micrometers and thermomechanical stability up to 400°C and delivers a maximum on-current of 1.1 milliamperes per micrometer after high-temperature annealing, all of which meet industrial integration.
DOI: adz2405